| Base Materials |
• Aluminum: 1.0–3.2 mm (Standard: 1.6 mm) |
| • Copper: 0.5–3.0 mm |
| • Ceramic (AlN, Al₂O₃): 0.38–1.0 mm |
| Thermal Conductivity |
• Aluminum: 1.0 – 3.0 W/m·K |
| • Copper: 385 W/m·K |
| • Ceramic (AlN): 170–200 W/m·K |
| Dielectric Layer |
• Thickness: 75μm / 100μm / 150μm / 200μm |
| • Thermal conductivity: 0.3 – 3.0 W/m·K |
| • Dielectric strength: ≥3 kV (per IPC-TM-650 2.5.7) |
| Layer Count |
1–4 layers (single/double-sided metal core; multilayer with buried signal layers) |
| Min. Line/Space |
0.1 mm / 0.1 mm (4 mil / 4 mil) |
| Min. Hole Size |
Mechanical: 0.2 mm (8 mil) |
| Laser (for ceramic): 0.1 mm (4 mil) |
| Surface Finish |
ENIG (2–5μ" Au), Immersion Silver, OSP, HASL (Lead-Free), ENEPIG |
| Thermal Resistance |
As low as 0.3°C/W (measured per JEDEC JESD51-14) |
| Special Technologies |
• Direct Bonded Copper (DBC) for SiC/GaN power modules |
| • Insulated Metal Substrate (IMS) with high-voltage isolation |
| • Hybrid MCPCB: FR-4 + metal core zones |
| Quality & Testing |
• Thermal impedance mapping (T3Ster) |
| • X-ray for die attach voids |
| • Thermal cycling: -40°C ↔ +150°C (1000 cycles) |
| • UL 94 V-0 flammability rating |
| Certifications |
IPC-4101 Class 2/3, UL Certified, ISO 9001, IATF 16949, AS9100D |
| Lead Time |
Prototypes: 5–7 days |
| Small batch: 7–10 days |
| Urgent (Top Priority): 72 hours |
